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| Знайдено в інших БД: | Реферативна база даних (16) |
Список видань за алфавітом назв: Авторський покажчик Покажчик назв публікацій  |
Пошуковий запит: (<.>A=Sukach A$<.>) | |||
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Загальна кількість знайдених документів : 16 Представлено документи з 1 до 16 |
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| 1. | 
Sukach A. N. Comparative study on influence of fetal bovine serum and serum of adult rat on cultivation of newborn rat neural cells [Електронний ресурс] / A. N. Sukach, M. V. Shevchenko, T. D. Liashenko // Biopolymers and cell. - 2014. - Vol. 30, № 5. - С. 394-399. - Режим доступу: http://nbuv.gov.ua/UJRN/BPK_2014_30_5_11 | ||
| 2. | 
Sukach A. V. Mechanisms of carrier transport in CdTe polycrystalline films [Електронний ресурс] / A. V. Sukach, V. V. Tetyorkin, N. M. Krolevec // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 2. - С. 221-225. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_2_23 Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 <$E mu roman m>. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T | ||
| 3. |
Sukach A. V. Tunneling current via dislocations in InAs and InSb infrared photodiodes [Електронний ресурс] / A. V. Sukach, V. V. Tetyorkin, N. M. Krolevec // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 4. - С. 416-420. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_4_9 Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of n | ||
| 4. |
Tetyorkin V. V. Photoluminescence studies of CdTe polycrystalline films [Електронний ресурс] / V. V. Tetyorkin, A. V. Sukach, S. V. Stariy, V. A. Boiko // Semiconductor physics, quantum electronics & optoelectronics. - 2012. - Vol. 15, № 4. - С. 340-344. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2012_15_4_9 Photoluminescence studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 <$E mu>m. The distinct spectral bands around 1,580 and 1,440 eV were observed at 77 K. These bands are attributed to shallow bound excitons at dislocations and deep defects, respectively. The intensity of luminescence related to dislocation defects is found to be proportional to the density of grain boundaries. The nature of grain boundaries in the investigated films has been briefly discussed. | ||
| 5. |
Tetyorkin V. V. Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions [Електронний ресурс] / V. V. Tetyorkin, A. V. Sukach, A. I. Tkachuk, S. P. Movchan // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 1. - С. 59-63. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_1_10 Iso-type p | ||
| 6. |
Sukach A. V. Heterostructure ohmic contacts to p-CdTe polycrystalline films [Електронний ресурс] / A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 3. - С. 268-271. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_3_12 Heterostructure contacts p<^>+ | ||
| 7. |
Tetyorkin V. V. Conductivity type conversion in p-CdZnTe under pulsed laser irradiation [Електронний ресурс] / V. V. Tetyorkin, A. V. Sukach, N. M. Krolevec // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 3. - С. 291-294. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_3_16 Laser-induced surface modification is investigated in p-Cd | ||
| 8. |
Sukach A. Carrier transport mechanisms in InSb diffusion p-n junctions [Електронний ресурс] / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 4. - С. 325-330. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_4_4 The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration <$En~symbol Ы~1,6~cdot~10 sup 15 ~roman cm sup -3> at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse current-voltage characteristics were investigated within the temperature range 77...156 K. It has been found that the total dark current consists of generation-recombination and tunneling current components, which are dominant at high (T = 120...156 K) and low (T << 120 K) temperatures, respectively. Experimental results have been explained using the model of a nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction with the rather thick (~<$E1~mu m>) depletion region tunneling current flows through the states related to dislocations in the depletion region. The performed estimation of electrical parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based photodiodes at operation temperatures T >> 77 K.Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thennal diffusion of Cd into single crystal substrates of n-type conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data. | ||
| 9. |
Sukach A. V. Carrier transport mechanisms in reverse biased InSb p-n junctions [Електронний ресурс] / A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk // Semiconductor physics quantum electronics & optoelectronics. - 2015. - Vol. 18, № 3. - С. 267-271. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_3_7 The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration <$En~symbol Ы~1,6~cdot~10 sup 15 ~roman cm sup -3> at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse current-voltage characteristics were investigated within the temperature range 77...156 K. It has been found that the total dark current consists of generation-recombination and tunneling current components, which are dominant at high (T = 120...156 K) and low (T << 120 K) temperatures, respectively. Experimental results have been explained using the model of a nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction with the rather thick (~<$E1~mu m>) depletion region tunneling current flows through the states related to dislocations in the depletion region. The performed estimation of electrical parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based photodiodes at operation temperatures T >> 77 K.Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thennal diffusion of Cd into single crystal substrates of n-type conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data. | ||
| 10. |
Tetyorkin V. V. Characterization of grain boundaries in CdTe polycrystalline films [Електронний ресурс] / V. V. Tetyorkin, A. V. Sukach, V. A. Boiko, A. I. Tkachuk // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 4. - С. 428-432. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_4_11 CdTe polycrystalline films with the average size of grains within the range 10 - 360 pm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral (along the film's surface) conductivity as a function of bias voltage and temperature were measured using appropriate arrangement of contacts. The transverse conductivity exhibits ohmic behavior, whereas the lateral transport of carriers is dominated by potential barriers at the grain boundaries. The carrier concentration in the grains and the potential barrier height have been estimated. The inhomogeneous distribution of deep defects through the grains was found from the photoluminescence measurements. | ||
| 11. |
Sukach A. V. Electrical properties of InSb p-n junctions prepared by diffusion methods [Електронний ресурс] / A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 3. - С. 295-298. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_3_11 InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process. | ||
| 12. |
Stariy S. V. Effect of thermal annealing on electrical and photoelectrical properties of n-InSb [Електронний ресурс] / S. V. Stariy, A. V. Sukach, V. V. Tetyorkin, V. O. Yukhymchuk, T. R. Stara // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 1. - С. 105-109. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_1_17 InSb wafers of n-type conductivity were annealed at 300, 370 and <$E400~symbol Р roman C> for 30 min in an open tube system under flowing argon ambient. The conductivity type conversion are revealed for the first time in samples with the electron concentration ~<$E1,0~cdot~10 sup 14 ~roman cm sup -3> for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples the spectral response exhibits pronounced increase in the short-wave region. The effect of annealing on electrical and photoelectrical properties of n-InSb has been explained by formation of In | ||
| 13. |
Beketov G. V. Trap-assisted conductivity in anodic oxide on InSb [Електронний ресурс] / G. V. Beketov, A. V. Sukach, V. V. Tetyorkin, S. P. Trotsenko // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 4. - С. 470-474. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_4_14 The direct current conductivity of anodic oxide of InSb has been investigated as a function of applied bias and temperature. Proposed in this work is a model of conductivity that includes ohmic, trap-assisted tunneling and Poole - Frenkel conduction processes. Two defect states were found in the energy gap of the anodic oxide, which can be attributed to bulk traps. The asymmetry in the current-voltage characteristics is analyzed in terms of comparative distribution of the applied bias voltage between the anodic oxide and the depletion region in InSb. | ||
| 14. |
Tetyorkin V. V. S1/f noise and carrier transport mechanisms in InSb p + -n junctions [Електронний ресурс] / V. V. Tetyorkin, A. V. Sukach, A. I. Tkachuk, S. P. Trotsenko // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 4. - С. 374-379. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_4_9 | ||
| 15. |
Sukach A. V. Shunt current in InAs diffused photodiodes [Електронний ресурс] / A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk // Semiconductor physics, quantum electronics & optoelectronics. - 2020. - Vol. 23, № 2. - С. 208-213. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2020_23_2_17 The shunt current has been investigated in p<^>+ | ||
| 16. | 
Sukach A. N. Transplantation of cryopreserved rat fetal neural cells in suspension and in multicellular aggregates into rats with spinal cord injury [Електронний ресурс] / A. N. Sukach, A. S. Lebedinsky, O. V. Ochenashko, A. Yu. Petrenko // Клітинна та органна трансплантологія. - 2016. - Т. 4, № 1. - С. 22-28. - Режим доступу: http://nbuv.gov.ua/UJRN/ktot_2016_4_1_6 | ||
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